Infineon IRFH9310TRPBF: High-Performance Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power management components. At the heart of many advanced switching applications, from high-frequency DC-DC converters to motor control systems, lies the power MOSFET. The Infineon IRFH9310TRPBF stands out as a premier component engineered to meet these rigorous challenges, offering a blend of low losses, robust performance, and high reliability.

This MOSFET is built on Infineon's advanced silicon technology, which is optimized for switching performance. A key highlight of the IRFH9310TRPBF is its exceptionally low on-state resistance (RDS(on)) of just 1.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for more compact designs by allowing for smaller heatsinks.

Furthermore, the device boasts a low gate charge (Qg) and low figures of merit (e.g., RDS(on) Qg). These characteristics are paramount for achieving high-frequency switching operation. By reducing both switching and driving losses, the MOSFET enables power supplies and converters to operate at higher frequencies, which in turn allows for the use of smaller passive components like inductors and capacitors. This capability is indispensable for applications such as server and telecom power systems, where board space is at a premium.

Housed in a PQFN 5x6 mm package, the IRFH9310TRPBF offers an excellent power-to-size ratio. This package features an exposed top pad for superior thermal management, facilitating efficient heat dissipation away from the die. Its high power density and ability to handle significant current (up to 104 A) make it an ideal choice for demanding environments, including industrial automation, automotive systems, and high-performance computing.

Robustness is another cornerstone of its design. The MOSFET offers a wide operating temperature range and is characterized for avalanche ruggedness, ensuring stable and reliable operation even under stressful electrical conditions. This durability is essential for mission-critical applications where failure is not an option.

ICGOOODFIND: The Infineon IRFH9310TRPBF is a top-tier power MOSFET that excels in advanced switching applications by delivering a superior combination of ultra-low RDS(on), minimized switching losses, and excellent thermal performance in a compact package, making it a cornerstone for designing efficient and high-power-density modern electronics.

Keywords: Power MOSFET, Low RDS(on), High-Frequency Switching, Power Density, Thermal Performance.