Infineon IRFRFR7540TRPBF N-Channel MOSFET: Datasheet, Application Circuit, and Pinout Configuration
The Infineon IRFRFR7540TRPBF is a high-performance N-Channel MOSFET engineered using advanced silicon technology to deliver exceptional efficiency and reliability in power management applications. This device is part of Infineon's robust portfolio of power semiconductors, designed to meet the demanding requirements of modern electronic systems, from switch-mode power supplies (SMPS) to motor control and battery management.
Datasheet Overview: Key Parameters
The datasheet for the IRFRFR7540TRPBF provides critical specifications that define its operational limits and performance characteristics. Key parameters include a drain-source voltage (VDS) of 40V, making it suitable for low-voltage applications such as DC-DC converters in computing and automotive systems. It boasts a continuous drain current (ID) of 13A at a case temperature of 25°C, ensuring high current handling capability. The device's standout feature is its very low on-state resistance (RDS(on)) of 3.7mΩ at 10V gate drive, which minimizes conduction losses and improves overall system efficiency. Additionally, it offers a low gate charge (Qg), which reduces switching losses and allows for higher frequency operation.
Pinout Configuration
The IRFRFR7540TRPBF is housed in a compact and efficient DPAK (TO-252) package, which is ideal for space-constrained applications while providing effective thermal performance. The pinout configuration is standard for this package:
Pin 1 (Gate): This is the control pin. A voltage applied between the gate and source terminals activates the MOSFET.
Pin 2 (Drain): The primary load current path is connected to this pin. It is electrically connected to the large tab of the package.
Pin 3 (Source): This pin completes the circuit path for the load current and is the reference point for the gate control signal.
Application Circuit: A Basic DC-DC Buck Converter
A common application for this MOSFET is as the main switching element in a synchronous buck converter circuit. This circuit is fundamental for stepping down a higher DC voltage to a lower, regulated output voltage, commonly used in voltage regulator modules (VRMs) for processors.
In a typical configuration:
1. The IRFRFR7540TRPBF is used as the high-side switch.
2. It is driven by a PWM (Pulse Width Modulation) controller IC.
3. The controller generates a switching signal at the gate pin, turning the MOSFET on and off at a high frequency (e.g., several hundred kHz).
4. When the MOSFET is on, current flows from the input source through the inductor to the output capacitor and load.
5. When it is off, the inductor's magnetic field collapses, maintaining current flow through a freewheeling diode or a low-side MOSFET (in a synchronous design).
6. The low RDS(on) ensures minimal voltage drop and power loss during the on-state, which is crucial for maintaining high efficiency and reducing heat generation.
Proper layout is critical; short, wide traces to the drain and source pins are necessary to minimize parasitic inductance. A gate driver IC is often recommended to provide the strong, fast switching signals needed to quickly transition the MOSFET through its linear region, further optimizing performance.
ICGOOODFIND: The Infineon IRFRFR7540TRPBF N-Channel MOSFET stands out as an excellent choice for high-efficiency, high-current switching applications. Its combination of extremely low on-resistance, high current capability, and a thermally efficient package makes it a superior component for designers aiming to maximize power density and performance in systems like server power supplies, automotive ECUs, and portable electronic devices.
Keywords: N-Channel MOSFET, Low RDS(on), DC-DC Converter, Power Management, Switching Application.
