Infineon IPD80R900P7: An 80 mΩ Superjunction MOSFET Engineered for High-Efficiency Power Conversion

In the relentless pursuit of higher efficiency and power density across applications like server SMPS, telecom rectifiers, and industrial motor drives, the choice of switching device is paramount. The Infineon IPD80R900P7 stands out as a premier solution, a Superjunction (SJ) MOSFET that masterfully balances ultra-low on-state resistance with superior switching performance.

At the core of this MOSFET is its remarkably low typical on-state resistance (R DS(on)) of just 80 mΩ at a gate-source voltage of 10 V. This exceptionally low resistance is the primary contributor to minimizing conduction losses. When high currents flow through the switch, the power dissipated as heat (I²R) is drastically reduced. This allows designers to either achieve higher efficiency levels or use a smaller form-factor device without compromising thermal performance, directly enabling more compact and powerful end-products.

However, efficiency is not solely about conduction. In high-frequency switching circuits, switching losses become equally critical. The IPD80R900P7 leverages Infineon's advanced Superjunction technology, which optimizes the trade-off between R DS(on) and gate charge (Q G). The device features low internal capacitances and gate charge, which translates to faster switching speeds, reduced drive requirements, and significantly lower switching losses. This makes it exceptionally suitable for high-frequency operations, allowing for the use of smaller magnetic components and further increasing power density.

The device is rated for 650 V drain-source voltage, providing a robust safety margin for operation in off-line power supplies typically found in 400 V AC systems. Its high avalanche ruggedness ensures reliability in harsh, noisy environments where voltage spikes are common. Furthermore, its low gate charge also simplifies driver design, reducing the burden on the PWM controller and contributing to overall system cost savings.

Housed in a TO-220 package, the IPD80R900P7 offers a familiar and versatile footprint that is easy to implement and provides excellent thermal dissipation characteristics when mounted on a heatsink. This package choice makes it an ideal candidate for a wide range of medium to high-power conversion tasks.

ICGOODFIND: The Infineon IPD80R900P7 is a high-performance Superjunction MOSFET that sets a benchmark for efficiency. Its defining combination of an ultra-low 80 mΩ R DS(on) and exceptionally low gate charge directly tackles both conduction and switching losses. This makes it a superior choice for designers aiming to push the boundaries of efficiency and power density in modern AC-DC and DC-DC power conversion systems.

Keywords: Superjunction MOSFET, Low RDS(on), High-Efficiency, Power Conversion, Low Gate Charge.