Infineon IRFS3004TRL7PP 300A N-Channel HEXFET Power MOSFET

Release date:2025-10-31 Number of clicks:112

Infineon IRFS3004TRL7PP: A Deep Dive into a 300A N-Channel Power MOSFET

In the realm of high-power electronics, the efficient control and management of significant current is paramount. The Infineon IRFS3004TRL7PP stands as a formidable solution, a 300A N-Channel HEXFET Power MOSFET engineered to meet the rigorous demands of modern power conversion and switching applications. This device encapsulates advanced semiconductor technology, offering a blend of extremely low on-state resistance and high current handling capability that is critical for minimizing power losses and enhancing overall system efficiency.

At the heart of this MOSFET's performance is its superior HEXFET technology. This proprietary design from Infineon ensures a very low typical gate charge (Qg) and outstanding switching performance. The result is a component that can operate efficiently at high frequencies, a necessity for compact and high-performance switch-mode power supplies (SMPS), motor control systems, and high-current DC-DC converters. The ultra-low RDS(on) of just 1.6 mΩ (max) at 10V VGS is a key figure, directly translating to reduced conduction losses. This means less energy is wasted as heat, allowing for cooler operation and potentially reducing the size and cost of associated heat sinks.

The robustness of the IRFS3004TRL7PP is further highlighted by its industry-leading SOA (Safe Operating Area). This provides a wide margin of safety for operation under stressful conditions, including high current and voltage. Housed in a TO-220 FullPAK package, the component offers enhanced mechanical strength and superior isolation between the mounting surface and the tab. This package is specifically designed for efficient thermal management, facilitating the transfer of heat away from the silicon die to the external environment, which is crucial for maintaining reliability under continuous high-current operation.

Designers integrating this MOSFET benefit from its ability to simplify power stage design. The high current rating allows for the use of fewer components in parallel in many high-power scenarios, reducing board space and system complexity. Its compatibility with standard logic-level drivers also simplifies the driving circuitry, making it a versatile choice for both new designs and upgrades to existing systems seeking higher performance and efficiency.

ICGOODFIND: The Infineon IRFS3004TRL7PP is a powerhouse component that sets a high benchmark for performance in its category. Its exceptional combination of minimal RDS(on), high current capacity, and robust thermal and mechanical characteristics makes it an ideal choice for engineers designing high-efficiency, high-power-density applications where reliability and performance cannot be compromised.

Keywords: HEXFET Technology, Low RDS(on), High Current Switching, Power Efficiency, Thermal Management.

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