Infineon AUIRFP4568-E: Powering the Next Generation of Automotive and Industrial Systems

In the demanding worlds of automotive and industrial electronics, efficiency, reliability, and robustness are not just desirable—they are mandatory. The Infineon AUIRFP4568-E stands out as a high-performance N-channel power MOSFET engineered specifically to meet these stringent requirements, offering a superior blend of low losses and high durability.

This MOSFET is built on Infineon's advanced Ultra Junction technology, a key innovation that drastically reduces on-state resistance. With an exceptionally low R DS(on) of just 1.7 mΩ at 10 V, the AUIRFP4568-E minimizes conduction losses. This translates directly into higher efficiency, less heat generation, and improved overall system performance. For applications like electric power steering (EPS), braking systems, and engine management, where every watt saved counts, this low resistance is a critical advantage.

Beyond its impressive efficiency, the device is designed for unwavering reliability in harsh environments. It is AEC-Q101 qualified, ensuring it meets the rigorous quality and durability standards for automotive components. It features an extended avalanche ruggedness and can handle high peak currents, making it exceptionally tolerant of voltage spikes and stressful load conditions common in automotive and industrial settings. The low gate charge (Q G) also enables fast switching speeds, which is essential for high-frequency switching power supplies in industrial motor drives and DC-DC converters.

The combination of a TO-220 FullPAK package offers superior power dissipation capabilities. This package is fully isolated, simplifying the mechanical mounting process by eliminating the need for an additional insulation kit, thereby reducing both assembly time and cost.

ICGOODFIND: The Infineon AUIRFP4568-E is a top-tier component that masterfully balances ultra-low power loss with supreme ruggedness. It is an ideal solution for designers seeking to enhance the efficiency, compactness, and reliability of high-current applications in the automotive and industrial sectors.

Keywords: Power MOSFET, High Efficiency, Automotive Grade (AEC-Q101), Low RDS(on), Ultra Junction Technology.